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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(*)M = 340 AIT(RMS) = 540 AITSM = 4.7·103 AVT0 = 1.20 VrT = 2.30 mΩ· Patented free-floating silicon technology· Low on-state and switching losses
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2025-07-31 |
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日立能源ABB PCT晶闸管5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(*)M = 5200 AIT(RMS) = 8170 AITSM = 99.0·103 AVT0 = 1.04 VrT = 0.115 mΩ• Patented free-floating silicon technology• Low on-state and switching los
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2025-07-30 |
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日立能源ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(*)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology· Lo
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2025-07-29 |
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日立能源ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(*)M = 3450 AIT(RMS) = 5420 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩ• Patented free-floating silicon technolo
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2025-07-28 |
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日立能源ABB PCT晶闸管5STP 25M5200
Phase Control Thyristor5STP 25M5200VDRM = 5200 VIT(*)M = 2400 AIT(RMS) = 3770 AITSM = 50.5·103 AVT0 = 0.990 VrT = 0.237 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-07-25 |
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日立能源ABB PCT晶闸管5STP 25L5200
Phase Control Thyristor5STP 25L5200VDRM = 5200 VIT(*)M = 2830 AIT(RMS) = 4450 AITSM = 50.5·103 AVT0 = 0.990 VrT = 0.237 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-07-24 |
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日立能源ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(*)M = 1970 AIT(RMS) = 3090 AITSM = 34.0·103 AVT0 = 0.994 VrT = 0.343 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-07-23 |
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日立能源ABB PCT二极管5STP 04D5200
Phase Control Thyristor5STP 04D5200VDRM = 5200 VIT(*)M = 420 AIT(RMS) = 650 AITSM = 6.1·103 AVT0 = 1.29 VrT = 1.917 mΩDoc. No. 5SYA1026-08 May. 20• Patented free-floating silicon technology• Low o
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2025-07-22 |
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