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ABB IGBT模块5SNG 0600R120590
主要用于通用变频器、电源等行业VCE = 1200 VIC = 2x 600 A可靠的辅助触点的压配合销超低损耗坚固的壕沟IGBT芯片组NTC热敏电阻用于低热阻性的铜基板行业标准封装ABB IGBT模块5SNG0600R120500ABB IGBT模块5SNG0600R12
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2025-06-09 |
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5SNG 0450R170301
供应 ABB IGBT模块—5SNG 0450R170301ABB IGBT模块5SNG0450R1703015SNG 0450R170301LoPak1相腿IGBT模块VCE=1700伏集成电路=2x450安培用于可靠辅助触点的压配销低损耗、平滑切换的SPT++芯片组用于温度检测的NTC热敏电
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2025-06-06 |
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ABB PCT晶闸管5STP 48Y7200
Phase Control Thyristor5STP 48Y7200VDRM = 7200 VIT(*)M = 5040 AIT(RMS) = 7910 AITSM = 92.0·103 AVT0 = 0.983 VrT = 0.128 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-06-05 |
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ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(*)M = 1830 AIT(RMS) = 2870 AITSM = 47.5·103 AVT0 = 1.21 VrT = 0.431 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-06-04 |
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ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(*)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology· Lo
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2025-06-03 |
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ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(A V)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology·
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2025-05-30 |
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ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(*)M = 1970 AIT(RMS) = 3090 AITSM = 34.0·103 AVT0 = 0.994 VrT = 0.343 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-05-29 |
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ABB PCT二极管5STP 28L4200
Phase Control Thyristor5STP 28L4200VDRM=4200 VIT(*)M=3290 AIT(RMS)=5160 AITSM= 54.0·103AVT0=1.03 VrT=0.138 mW
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2025-05-28 |
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