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ABB PCT晶闸管5STP 03D6500
5STP 03D6500Phase control thyristor• VDRM, VRRM = 6500 V• ITA Vm = 390 A• ITSM = 4700 A• VT0 = 1.200 V• rT = 2.300 mΩ• Patented free-floating silicon technology• Low on-state losses• Designed
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2025-04-17 |
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ABB PCT晶闸管5STP 34N5200
Phase Control Thyristor5STP 34N5200Phase Control Thyristor5STP 34N5200VDRM = 5200 VIT(A V)M = 3450 AIT(RMS) = 5420 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩ• Patented free-floating silicon techno
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2025-04-16 |
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ABB PCT二极管5STP 38N4200
Phase Control Thyristor5STP 38N4200VDRM=4200 VIT(A V)M=4090 AIT(RMS)=6420 AITSM= 64.5·103AVT0=0.973 VrT=0.126 m
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2025-04-14 |
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ABB PCT二极管5STP 12F4200
Phase Control Thyristor5STP 12F4200VDRM=4200 VIT(*)M=1190 AIT(RMS)=1860 AITSM= 17.3·103AVT0=1.01 VrT=0.545 mW
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2025-04-11 |
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ABB PCT二极管5STP 45N2800
Phase Control Thyristor5STP 45N2800VDRM=2800 VIT(*)M=5250 AIT(RMS)=8240 AITSM= 77.0·103AVT0=0.864 VrT=0.069 mW•专利浮动硅技术•低导通损耗和开关损耗•为牵引、能源和工业应用而设计•z优的功率处理能力普
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2025-04-10 |
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ABB PCT二极管5STP 07D1800
Phase Control Thyristor5STP 07D1800VDRM=1800 VIT(*)M=760 AIT(RMS)=1190 AITSM= 9.0·103AVT0=0.927 VrT=0.448 m• 专利浮动硅技术• 低导通损耗和开关损耗• 为牵引、能源和工业应用而设计• z优的功率处理能
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2025-04-07 |
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ABB GTO二极管5SGA 06D4502
Asymmetric Gate turn-offThyristor5SGA 06D4502PRELIMINARYVDRM=4500 VITGQM=600 AITSM=3×103AVT0=1.9 VrT=3.5 mWVDclink=2800 V·专利自由浮动硅技术·低导通状态和开关损耗·中心栅电极·行业标准外壳·抗宇宙辐
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2025-04-02 |
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ABB GTO二极管5SGA 25H2501
Gate turn-off Thyristor5SGA 25H2501VDRM= 2500 VITGQM= 2500 AITSM=16 kAVT0=1.66 VrT=0.57 mWVDClin= 1400 V专利自由漂浮硅技术低导通损耗和开关损耗环形闸极工业标准外壳宇宙辐射耐受等级门极可关断晶闸管（GTO
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2025-04-01 |
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