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ABB PCT晶闸管5STP 48Y7200
Phase Control Thyristor5STP 48Y7200VDRM = 7200 VIT(*)M = 5040 AIT(RMS) = 7910 AITSM = 92.0·103 AVT0 = 0.983 VrT = 0.128 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-06-05 |
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ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(*)M = 1830 AIT(RMS) = 2870 AITSM = 47.5·103 AVT0 = 1.21 VrT = 0.431 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-06-04 |
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ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(*)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology· Lo
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2025-06-03 |
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ABB PCT晶闸管5STP 34Q5200
Phase Control Thyristor5STP 34Q5200VDRM = 5200 VIT(A V)M = 3720 AIT(RMS) = 5840 AITSM = 63.0·103 AVT0 = 0.96 VrT = 0.194 mΩDoc. No. 5SYA1052-07 Apr. 20· Patented free-floating silicon technology·
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2025-05-30 |
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ABB PCT二极管5STP 17H5200
Phase Control Thyristor5STP 17H5200VDRM = 5200 VIT(*)M = 1970 AIT(RMS) = 3090 AITSM = 34.0·103 AVT0 = 0.994 VrT = 0.343 mΩ· Patented free-floating silicon technology· Low on-state and switching lo
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2025-05-29 |
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ABB PCT二极管5STP 28L4200
Phase Control Thyristor5STP 28L4200VDRM=4200 VIT(*)M=3290 AIT(RMS)=5160 AITSM= 54.0·103AVT0=1.03 VrT=0.138 mW
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2025-05-28 |
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ABB PCT二极管5STP 45N2800
Phase Control Thyristor5STP 45N2800VDRM=2800 VIT(*)M=5250 AIT(RMS)=8240 AITSM= 77.0·103AVT0=0.864 VrT=0.069 mW•专利浮动硅技术•低导通损耗和开关损耗•为牵引、能源和工业应用而设计•z优的功率处理能力普
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2025-05-27 |
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ABB PCT二极管5STP 24H2800
Phase Control Thyristor5STP 24H2800VDRM=2800 VIT(*)M=2780 AIT(RMS)=4360 AITSM= 43.0·103AVT0=0.928 VrT=0.141 mW•专利浮动硅技术•低导通损耗和开关损耗•为牵引、能源和工业应用而设计•z优的功率处理能力普
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2025-05-26 |
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