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日立能源ABB PCT晶闸管 5STP 26N6500
Phase Control Thyristor5STP 26N6500VDRM = 6500 VIT(A V)M = 2880 AIT(RMS) = 4520 AITSM = 65.0·103 AVT0 = 1.12 VrT = 0.290 mΩ· Patented free-floating silicon technology· Low on-state and switching l
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2025-12-30 |
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日立能源ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(*)M = 1830 AIT(RMS) = 2870 AITSM = 47.5·103 AVT0 = 1.21 VrT = 0.431 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-12-29 |
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日立能源ABB PCT晶闸管 5STP 12K6500
Phase Control Thyristor5STP 12K6500VDRM = 6500 VIT(*)M = 1430 AIT(RMS) = 2250 AITSM = 31.5·103 AVT0 = 1.15 VrT = 0.647 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-12-26 |
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日立能源ABB PCT晶闸管 5STP 08G6500
Phase Control Thyristor5STP 08G6500VDRM = 6500 VIT(*)M = 730 AIT(RMS) = 1150 AITSM = 15.1·103 AVT0 = 1.20 VrT = 1.046 mΩ· Patented free-floating silicon technology· Low on-state and switching loss
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2025-12-25 |
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日立能源ABB PCT晶闸管 5STP 08F6500
Phase Control Thyristor5STP 08F6500VDRM = 6500 VIT(*)M = 850 AIT(RMS) = 1340 AITSM = 15.1·103 AVT0 = 1.20 VrT = 1.046 mΩ· Patented free-floating silicon technology· Low on-state and switching loss
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2025-12-24 |
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日立能源ABB PCT晶闸管5STP 03X6500
Phase Control Thyristor5STP 03X6500VDRM = 6500 VIT(*)M = 340 AIT(RMS) = 540 AITSM = 4.7·103 AVT0 = 1.20 VrT = 2.30 mΩ· Patented free-floating silicon technology· Low on-state and switching losses
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2025-12-23 |
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日立能源ABB PCT晶闸管5STP 03D6500
5STP 03D6500Phase control thyristor• VDRM, VRRM = 6500 V• IT*m = 390 A• ITSM = 4700 A• VT0 = 1.200 V• rT = 2.300 mΩ• Patented free-floating silicon technology• Low on-state losses• Designed f
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2025-12-22 |
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日立能源ABB PCT晶闸管 5STP 52U5200
Phase Control Thyristor5STP 52U5200VDRM = 5200 VIT(*)M = 5200 AIT(RMS) = 8170 AITSM = 99.0·103 AVT0 = 1.04 VrT = 0.115 mΩ• Patented free-floating silicon technology• Low on-state and switching los
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2025-12-19 |
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