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日立能源ABB IGBT模块5SNG 0600R120501
ABB IGBT模块5SNG0600R1205015SNG0600R120501参数：1200V 2*600AVCE = 1200 VIC = 2x 600 A主要用于通用变频器、电源等行业可靠的辅助触点的压配合销超低损耗坚固的壕沟IGBT芯片组NTC热敏电阻用于低热阻性的铜基板行
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2025-08-15 |
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日立能源ABB PCT晶闸管5STP 45Y8500
Phase Control Thyristor5STP 45Y8500VDRM=8500 VIT(A V)M=4450 AIT(RMS)=6990 AITSM= 90.0·103AVT0=1.06 VrT=0.168 mPatented free-floating silicon technologyLow on-state and switching lossesDesigne
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2025-08-14 |
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日立能源ABB PCT晶闸管5STP 27Q8500
Phase Control Thyristor5STP 27Q8500VDRM = 8500 VIT(*)M = 2870 AIT(RMS) = 4510 AITSM = 64.0·103 AVT0 = 1.13 VrT = 0.394 mΩ• Patented free-floating silicon technology• Low on-state and switching los
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2025-08-13 |
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日立能源ABB PCT晶闸管5STP 27N8500
Phase Control Thyristor5STP 27N8500VDRM=8500 VIT(*)M=2660 AIT(RMS)=4180 AITSM= 64.0·103AVT0=1.13 VrT=0.394 m•Patented free-floating silicon technology•Low on-state and switching losses•Designed
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2025-08-12 |
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日立能源ABB PCT晶闸管5STP 42U6500
Phase Control Thyristor5STP 42U6500VDRM = 6500 VIT(*)M = 4300 AIT(RMS) = 6750 AITSM = 86.0·103 AVT0 = 1.17 VrT = 0.181 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-08-11 |
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日立能源ABB PCT晶闸管5STP 26N6500
Phase Control Thyristor5STP 26N6500VDRM = 6500 VIT(*)M = 2880 AIT(RMS) = 4520 AITSM = 65.0·103 AVT0 = 1.12 VrT = 0.290 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-08-08 |
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日立能源ABB PCT晶闸管5STP 18M6500
Phase Control Thyristor5STP 18M6500VDRM = 6500 VIT(*)M = 1830 AIT(RMS) = 2870 AITSM = 47.5·103 AVT0 = 1.21 VrT = 0.431 mΩ· Patented free-floating silicon technology· Low on-state and switching los
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2025-08-07 |
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日历能源ABB PCT晶闸管5STP 08G6500
Phase Control Thyristor5STP 08G6500VDRM = 6500 VIT(*)M = 730 AIT(RMS) = 1150 AITSM = 15.1·103 AVT0 = 1.20 VrT = 1.046 mΩ· Patented free-floating silicon technology· Low on-state and switching loss
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2025-08-06 |
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